Di-Carbon Defects in Annealed Highly Carbon Doped GaAs
نویسندگان
چکیده
Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm21 in GaAs codoped with C and C after annealing at 850 ±C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm21 from a different C-C complex. [S0031-9007(96)01981-3]
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تاریخ انتشار 1996